JAN2N6058 [Microchip]

JAN2N6058 Overview

DC current gain in this device equals 1000 @ 6A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 120mA, 12A.An emitter's base voltage can be kept at 5V to gain high efficiency.

JAN2N6058 Features

the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

JAN2N6058 Applications

There are a lot of Microsemi Corporation
JAN2N6058 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting