JAN2N6764 [Microchip]

JAN2N6764 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 38A continuous drain current (ID).Peak drain current is 152A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

JAN2N6764 Features

the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 38A
based on its rated peak drain current 152A.
a 100V drain to source voltage (Vdss)

JAN2N6764 Applications

There are a lot of Microsemi Corporation
JAN2N6764 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies