JAN2N6768 [Microchip]

JAN2N6768 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 170 ns.Its maximum pulsed drain current is 56A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 400V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

JAN2N6768 Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 170 ns
based on its rated peak drain current 56A.
a 400V drain to source voltage (Vdss)

JAN2N6768 Applications

There are a lot of Microsemi Corporation
JAN2N6768 applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters