JAN2N6770 [Microchip]

JAN2N6770 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 750 mJ.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 48A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

JAN2N6770 Features

the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 48A.
a 500V drain to source voltage (Vdss)

JAN2N6770 Applications

There are a lot of Microsemi Corporation
JAN2N6770 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples