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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. JAN2N6782 Microchip

    JAN2N6782 [Microchip]

    JAN2N6782
    JAN2N6782

    Part No:

    JAN2N6782

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    MOSFET (Metal Oxide) N-Channel Bulk 610m ? @ 3.5A, 10V ±20V 8.1nC @ 10V 100V TO-205AF Metal Can

    RoHS Status:

    Product FAQ

    1. Is JAN2N6782 available for RFQ?

    Yes. JAN2N6782 by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for JAN2N6782?

    Pricing for JAN2N6782 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of JAN2N6782?

    JAN2N6782 is a Microchip Transistors with Packaging: Bulk and Current - Continuous Drain (Id) @ 25°C: 3.5A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for JAN2N6782?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can JAN2N6782 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to JAN2N6782?

    Yes. If JAN2N6782 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    JAN2N6782

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-205AF Metal Can
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Bulk
    Series
    Military, MIL-PRF-19500/556
    JESD-609 Code
    e0
    Pbfree Code
    no
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Terminal Finish
    Tin/Lead (Sn/Pb)
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    BOTTOM
    Terminal Form
    WIRE
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Reference Standard
    MIL-19500
    Qualification Status
    Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    800mW Ta 15W Tc
    Operating Mode
    ENHANCEMENT MODE
    Case Connection
    DRAIN
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Current - Continuous Drain (Id) @ 25°C
    3.5A Tc
    Gate Charge (Qg) (Max) @ Vgs
    8.1nC @ 10V
    Drain to Source Voltage (Vdss)
    100V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±20V
    Continuous Drain Current (ID)
    3.5A
    Gate to Source Voltage (Vgs)
    20V
    Drain-source On Resistance-Max
    0.6Ohm
    Pulsed Drain Current-Max (IDM)
    14A
    DS Breakdown Voltage-Min
    100V
    Turn Off Time-Max (toff)
    45ns
    Turn On Time-Max (ton)
    40ns
    RoHS Status
    RoHS Compliant

    Products Detail

    JAN2N6782 Overview


    This device's continuous drain current (ID) is 3.5A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 14A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

    JAN2N6782 Features


    a continuous drain current (ID) of 3.5A
    based on its rated peak drain current 14A.
    a 100V drain to source voltage (Vdss)


    JAN2N6782 Applications


    There are a lot of Microsemi Corporation
    JAN2N6782 applications of single MOSFETs transistors.


    • Consumer Appliances
    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples

    Documents

    Datasheets:

    2N6782,84,86
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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