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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. JAN2N6849 Microchip

    JAN2N6849 [Microchip]

    JAN2N6849
    JAN2N6849

    Part No:

    JAN2N6849

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    MOSFET (Metal Oxide) P-Channel Bulk 320m ? @ 6.5A, 10V ±20V 34.8nC @ 10V 100V TO-205AF Metal Can

    RoHS Status:

    Product FAQ

    1. Is JAN2N6849 available for RFQ?

    Yes. JAN2N6849 by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for JAN2N6849?

    Pricing for JAN2N6849 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of JAN2N6849?

    JAN2N6849 is a Microchip Transistors with Packaging: Bulk and Current - Continuous Drain (Id) @ 25°C: 6.5A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for JAN2N6849?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can JAN2N6849 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to JAN2N6849?

    Yes. If JAN2N6849 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    JAN2N6849

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Contact Plating
    Lead, Tin
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-205AF Metal Can
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Bulk
    Series
    Military, MIL-PRF-19500/564
    Published
    1997
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Additional Feature
    HIGH RELIABILITY
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    BOTTOM
    Terminal Form
    WIRE
    Qualification Status
    Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    800mW Ta 25W Tc
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    800mW
    Case Connection
    DRAIN
    FET Type
    P-Channel
    Transistor Application
    SWITCHING
    Current - Continuous Drain (Id) @ 25°C
    6.5A Tc
    Gate Charge (Qg) (Max) @ Vgs
    34.8nC @ 10V
    Drain to Source Voltage (Vdss)
    100V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±20V
    Continuous Drain Current (ID)
    6.5A
    Gate to Source Voltage (Vgs)
    20V
    RoHS Status
    RoHS Compliant

    Products Detail

    JAN2N6849 Overview


    The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.5A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

    JAN2N6849 Features


    a continuous drain current (ID) of 6.5A
    a 100V drain to source voltage (Vdss)


    JAN2N6849 Applications


    There are a lot of Microsemi Corporation
    JAN2N6849 applications of single MOSFETs transistors.


    • LCD/LED TV
    • Consumer Appliances
    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools

    Documents

    Datasheets:

    2N6849
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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