JAN2N7227 [Microchip]

JAN2N7227 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 14A continuous drain current (ID).Peak drain current is 56A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 400V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

JAN2N7227 Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
based on its rated peak drain current 56A.
a 400V drain to source voltage (Vdss)

JAN2N7227 Applications

There are a lot of Microsemi Corporation
JAN2N7227 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies