BFU590GX [NXP]

Product Description:

The BFU590GX is a high-frequency NPN bipolar junction transistor (BJT) designed for surface-mount applications. Manufactured by NXP USA Inc., this transistor is part of the BFU590 family and is suitable for a wide range of RF and microwave applications.

Features:

• High current-collector capacity of up to 200mA
• High DC current gain of 60 at 80mA and 8V
• High-frequency operation up to 8.5GHz
• High gain of 8dB
• Operating temperature range of -40°C to 150°C
• Available in two package options: TO-261-4 and TO-261AA
• Compliant with ROHS3 standards
• Active part status with a factory lead time of 13 weeks

Applications:

• Primary applications: RF amplifiers, microwave amplifiers, and high-frequency switching circuits
• Secondary applications: Audio amplifiers, power supplies, and motor control circuits

Alternative Parts:

• BFU590 (base part number)
• Other NPN BJTs with similar specifications and applications

Embedded Modules:

• RF and microwave modules
• High-frequency amplifiers
• Switching power supplies

FAQs:

Q: What is the maximum current-collector capacity of the BFU590GX? A: The maximum current-collector capacity is 200mA.

Q: What is the DC current gain of the BFU590GX? A: The DC current gain is at least 60 at 80mA and 8V.

Q: What is the frequency range of the BFU590GX? A: The frequency range is up to 8.5GHz.

Q: What is the packaging option for the BFU590GX? A: The packaging option is cut tape (CT) with two package options: TO-261-4 and TO-261AA.

Q: Is the BFU590GX ROHS compliant? A: Yes, the BFU590GX is ROHS3 compliant.

Q: What is the operating temperature range of the BFU590GX? A: The operating temperature range is -40°C to 150°C TJ.

Q: Is the BFU590GX an active part? A: Yes, the BFU590GX is an active part with a factory lead time of 13 weeks.