Is MC13852EPR2 available for RFQ?

Yes. MC13852EPR2 by NXP is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

Why is there no fixed price for MC13852EPR2?

Pricing for MC13852EPR2 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

What are the key specifications of MC13852EPR2?

MC13852EPR2 is a NXP Wireless & RF Integrated Circuits with Operating Temperature: -30°C ~ 85°C and Storage Temperature: -65°C ~ 150°C. Review the product details or submit an RFQ if you need confirmation before purchase.

How fast can I get a quote for MC13852EPR2?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

How soon can MC13852EPR2 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

Can you suggest alternatives to MC13852EPR2?

Yes. If MC13852EPR2 is unavailable, obsolete, or does not meet your required lead time, we can help check similar NXP Wireless & RF Integrated Circuits parts or compatible alternatives.

MC13852EPR2 - NXP | Electronic Components

Name: MC13852EPR2
Brand: NXP
SKU: MC13852EPR2
Availability: InStock

Type

Parameter

Supply Current

3mA ~ 6mA

Operating Temperature

-30°C ~ 85°C

Supply Voltage

2.3V ~ 3.0V

Package

MLPD-8 (2.0 x 2.0 x 0.6 mm)

Storage Temperature

-65°C ~ 150°C

Packing

Tape and reel

Case

2128-01

Rf Frequency Max

1000MHz

Rf Frequency Min

400MHz

The MC13852 is a general purpose low noise amplifier with a bypass switch, designed for applications from 400 to 1000 MHz. It features an integrated bypass switch to preserve high input intercept performance in variable signal strength environments and boost dynamic range. On-chip bias circuitry offers low system cost. The input and output match are external to allow maximum design flexibility. The external resistor used to set device current enables balancing required linearity with low current consumption. Gain is optimized for applications <1000MHz. It is fabricated with an advanced RF BiCMOS process using the eSiGe:C module and is available in the 2 × 2 mm MLPD-8 leadless package, offering a small, low height, easy-to-solder solution.

Gain: 20.3 dB (typ) at 434 MHz, 18.7 dB (typ) at 900 MHz
Output third order intercept point (OIP3): 10.6 dBm at 434 MHz, 14.2 dBm at 900 MHz
Noise Figure (NF): 1.65 dB (typ) at 434 MHz, 1.2 dB at 900 MHz
Output 1dB compression point (P1dB): 7.8 dBm at 434 MHz, 9.6 dBm at 900 MHz
IP3 Boost Circuitry
Bypass mode return losses are comparable to active mode
Bypass mode improves dynamic range
Integrated logic-controlled standby mode with current drain < 1uA
Total supply current variable from 3–6 mA using an external bias resistor
Average current drain <0.6mA in a receiver lineup with 20% active / 80% bypass mode operation
On-chip bias sets the bias point
Bias stabilized for device and temperature variations
MLPD-8 leadless package with low parasitics
434MHz and 900MHz application circuit evaluation boards available
Available in tape and reel packaging