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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. PHP176NQ04T,127 NXP

    PHP176NQ04T,127 [NXP]

    PHP176NQ04T,127
    PHP176NQ04T,127

    Part No:

    PHP176NQ04T,127

    Category:

    Transistors

    Manufacturer:

    NXP

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 4.3m ? @ 25A, 10V ±20V 3620pF @ 25V 68.9nC @ 10V 40V TO-220-3

    RoHS Status:

    Product FAQ

    1. Is PHP176NQ04T,127 available for RFQ?

    Yes. PHP176NQ04T,127 by NXP is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for PHP176NQ04T,127?

    Pricing for PHP176NQ04T,127 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of PHP176NQ04T,127?

    PHP176NQ04T,127 is a NXP Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 75A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for PHP176NQ04T,127?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can PHP176NQ04T,127 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to PHP176NQ04T,127?

    Yes. If PHP176NQ04T,127 is unavailable, obsolete, or does not meet your required lead time, we can help check similar NXP Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    PHP176NQ04T,127

    Manufacturer:

    NXP

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mounting Type
    Through Hole
    Package / Case
    TO-220-3
    Surface Mount
    NO
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~175°C TJ
    Packaging
    Tube
    Published
    2009
    JESD-609 Code
    e3
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Terminal Finish
    Matte Tin (Sn)
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    SINGLE
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Pin Count
    3
    JESD-30 Code
    R-PSFM-T3
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    250W Tc
    Operating Mode
    ENHANCEMENT MODE
    Case Connection
    DRAIN
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Vgs(th) (Max) @ Id
    4V @ 1mA
    Input Capacitance (Ciss) (Max) @ Vds
    3620pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    75A Tc
    Gate Charge (Qg) (Max) @ Vgs
    68.9nC @ 10V
    Drain to Source Voltage (Vdss)
    40V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±20V
    JEDEC-95 Code
    TO-220AB
    Drain Current-Max (Abs) (ID)
    75A
    Drain-source On Resistance-Max
    0.0043Ohm
    Pulsed Drain Current-Max (IDM)
    240A
    DS Breakdown Voltage-Min
    40V
    Avalanche Energy Rating (Eas)
    560 mJ
    RoHS Status
    RoHS Compliant

    Products Detail

    PHP176NQ04T,127 Overview


    There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 560 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3620pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [75A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 240A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

    PHP176NQ04T,127 Features


    the avalanche energy rating (Eas) is 560 mJ
    based on its rated peak drain current 240A.
    a 40V drain to source voltage (Vdss)


    PHP176NQ04T,127 Applications


    There are a lot of NXP USA Inc.
    PHP176NQ04T,127 applications of single MOSFETs transistors.


    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
    • Industrial Power Supplies

    Documents

    Datasheets:

    PHP176NQ04T
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
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      Secure payment method

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