2N4401TAR [Onsemi]

2N4401TAR Overview

The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 1V.With a collector emitter saturation voltage of 750mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.

2N4401TAR Features

the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz

2N4401TAR Applications

There are a lot of ON Semiconductor
2N4401TAR applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting