2N4919 [Onsemi]

2N4919 Overview

In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).Supplier device package TO-225AA comes with the product.The device exhibits a collector-emitter breakdown at 60V.Maximum collector currents can be below 3A volts.

2N4919 Features

the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-225AA

2N4919 Applications

There are a lot of ON Semiconductor
2N4919 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting