2N4953 [Onsemi]

2N4953 Overview

In this device, the DC current gain is 200 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 15mA, 150mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Product comes in the supplier's device package TO-92-3.There is a 30V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2N4953 Features

the DC current gain for this device is 200 @ 150mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-92-3

2N4953 Applications

There are a lot of ON Semiconductor
2N4953 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting