2N5771 [Onsemi]

2N5771 Overview

DC current gain in this device equals 50 @ 10mA 300mV, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 50mA.An emitter's base voltage can be kept at 4.5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 200mA volts.

2N5771 Features

the DC current gain for this device is 50 @ 10mA 300mV
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 4.5V
the current rating of this device is -200mA
the supplier device package of TO-92-3

2N5771 Applications

There are a lot of ON Semiconductor
2N5771 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting