2N6517CTA [Onsemi]

2N6517CTA Overview

DC current gain in this device equals 20 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 350V volts.In extreme cases, the collector current can be as low as 500mA volts.

2N6517CTA Features

the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz

2N6517CTA Applications

There are a lot of ON Semiconductor
2N6517CTA applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting