2SB1202S-TL-E [Onsemi]

2SB1202S-TL-E Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 3A volts.

2SB1202S-TL-E Features

the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SB1202S-TL-E Applications

There are a lot of ON Semiconductor
2SB1202S-TL-E applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting