2SB1203T-E [Onsemi]

2SB1203T-E Overview

DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 550mV @ 150mA, 3A.An emitter's base voltage can be kept at -6V to gain high efficiency.As a result, the part has a transition frequency of 130MHz.In extreme cases, the collector current can be as low as 5A volts.

2SB1203T-E Features

the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz

2SB1203T-E Applications

There are a lot of ON Semiconductor
2SB1203T-E applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting