2SJ652-1E [Onsemi]

2SJ652-1E Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4360pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -60V.As a result of its turn-off delay time, which is 310 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 33 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 10V).

2SJ652-1E Features

a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 310 ns
a 60V drain to source voltage (Vdss)

2SJ652-1E Applications

There are a lot of ON Semiconductor
2SJ652-1E applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.