CNY17F1W [Onsemi]

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Available in white package (with -M suffix) and black package. UL recognized, VDE recognized. Current transfer ratio in select groups. High breakdown voltage (70V minimum for CNY17X/M, CNY17FX/M, MOC8106/7/8). Closely matched current transfer ratio minimizes unit-to-unit variation. Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptibility (CNY17FX/M, MOC810X).