PN200 [Onsemi]

PN200 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 20mA, 200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-92-3 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 500mA volts.

PN200 Features

the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is -500mA
the supplier device package of TO-92-3

PN200 Applications

There are a lot of ON Semiconductor
PN200 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting