SFT1202-TL-E [Onsemi]

SFT1202-TL-E Overview

In this device, the DC current gain is 200 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 165mV @ 100mA, 1A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

SFT1202-TL-E Features

the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz

SFT1202-TL-E Applications

There are a lot of ON Semiconductor
SFT1202-TL-E applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting