2SA1774EBTLR [ROHM]

2SA1774EBTLR Overview

This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -150mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.

2SA1774EBTLR Features

the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V

2SA1774EBTLR Applications

There are a lot of ROHM Semiconductor
2SA1774EBTLR applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting