2SAR514PT100 [ROHM]

2SAR514PT100 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 15mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.In the part, the transition frequency is 380MHz.A maximum collector current of 700mA volts can be achieved.

2SAR514PT100 Features

the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 15mA, 300mA
the emitter base voltage is kept at -6V
a transition frequency of 380MHz

2SAR514PT100 Applications

There are a lot of ROHM Semiconductor
2SAR514PT100 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting