2SB1565FU6E [ROHM]

2SB1565FU6E Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 200mA, 2A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.TO-220FN is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 3A volts.

2SB1565FU6E Features

the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 200mA, 2A
the emitter base voltage is kept at -7V
the supplier device package of TO-220FN

2SB1565FU6E Applications

There are a lot of ROHM Semiconductor
2SB1565FU6E applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting