2SB1580T100 [ROHM]

2SB1580T100 Overview

In this device, the DC current gain is 1000 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1mA, 1A.Maintaining the continuous collector voltage at -2A is essential for high efficiency.Keeping the emitter base voltage at 8V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).50MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.

2SB1580T100 Features

the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz

2SB1580T100 Applications

There are a lot of ROHM Semiconductor
2SB1580T100 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting