2SB1690TL [ROHM]

2SB1690TL Overview

In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 50mA, 1A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SB1690TL Features

the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 360MHz

2SB1690TL Applications

There are a lot of ROHM Semiconductor
2SB1690TL applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting