2SC4081UBTLR [ROHM]

2SC4081UBTLR Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 150mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.

2SC4081UBTLR Features

the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz

2SC4081UBTLR Applications

There are a lot of ROHM Semiconductor
2SC4081UBTLR applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting