2SD1768STPR [ROHM]

2SD1768STPR Overview

In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2SD1768STPR Features

the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

2SD1768STPR Applications

There are a lot of ROHM Semiconductor
2SD1768STPR applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting