2SD1980TL [ROHM]

2SD1980TL Overview

This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.

2SD1980TL Features

the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz

2SD1980TL Applications

There are a lot of ROHM Semiconductor
2SD1980TL applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting