2SD2656T106 [ROHM]

2SD2656T106 Overview

In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 400MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2SD2656T106 Features

the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 400MHz

2SD2656T106 Applications

There are a lot of ROHM Semiconductor
2SD2656T106 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting