2SD2661T100 [ROHM]

2SD2661T100 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 180mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 360MHz.A maximum collector current of 2A volts can be achieved.

2SD2661T100 Features

the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz

2SD2661T100 Applications

There are a lot of ROHM Semiconductor
2SD2661T100 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting