RF4E080BNTR [ROHM]

RF4E080BNTR Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 660pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 8A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.8A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.Peak drain current for this device is 32A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

RF4E080BNTR Features

a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 32A.

RF4E080BNTR Applications

There are a lot of ROHM Semiconductor
RF4E080BNTR applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification