FGF65A3L [SANKEN]

These are 650V Field Stop IGBTs with integrated Fast Recovery Diode. Featuring Sanken's original trench structure, they reduce gate capacitance, achieving low saturation voltage and switching losses, thus improving circuit efficiency. Key specifications include Vce=650V, Ic=30A at Tc=100°C, short circuit withstand time of 5μs, and typical Vce(sat)=1.6V. They are available in TO247-3L, TO3P-3L, and TO3PF-3L packages and are Pb-free (RoHS compliant).