2STR1160 [STMicroelectronics]

2STR1160 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 430mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 430mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.

2STR1160 Features

the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 100mA, 1A
the emitter base voltage is kept at 5V

2STR1160 Applications

There are a lot of STMicroelectronics
2STR1160 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting