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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. BD135-16 STMicroelectronics

    BD135-16 [STMicroelectronics]

    BD135-16
    BD135-16

    Part No:

    BD135-16

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

    RoHS Status:

    Product FAQ

    1. Is BD135-16 available for RFQ?

    Yes. BD135-16 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for BD135-16?

    Pricing for BD135-16 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of BD135-16?

    BD135-16 is a STMicroelectronics Transistors with Packaging: Tube and DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA 2V and Collector Emitter Saturation Voltage: 500mV. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for BD135-16?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can BD135-16 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to BD135-16?

    Yes. If BD135-16 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    BD135-16

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    NRND (Last Updated: 7 months ago)
    Factory Lead Time
    8 Weeks
    Contact Plating
    Tin
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-225AA, TO-126-3
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    JESD-609 Code
    e3
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Max Power Dissipation
    1.25W
    Base Part Number
    BD135
    Pin Count
    3
    Number of Elements
    1
    Element Configuration
    Single
    Power Dissipation
    1.25W
    Transistor Application
    AMPLIFIER
    Polarity/Channel Type
    NPN
    Transistor Type
    NPN
    Collector Emitter Voltage (VCEO)
    45V
    Max Collector Current
    1.5A
    DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 2V
    Current - Collector Cutoff (Max)
    100nA ICBO
    Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
    Collector Emitter Breakdown Voltage
    45V
    Transition Frequency
    250MHz
    Collector Emitter Saturation Voltage
    500mV
    Collector Base Voltage (VCBO)
    45V
    Emitter Base Voltage (VEBO)
    5V
    hFE Min
    100
    Height
    10.8mm
    Length
    7.8mm
    Width
    2.7mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant

    Products Detail

    BD135-16 Overview


    In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

    BD135-16 Features


    the DC current gain for this device is 40 @ 150mA 2V
    a collector emitter saturation voltage of 500mV
    the vce saturation(Max) is 500mV @ 50mA, 500mA
    the emitter base voltage is kept at 5V
    a transition frequency of 250MHz


    BD135-16 Applications


    There are a lot of STMicroelectronics
    BD135-16 applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Datasheets:

    BD135-136,139-140
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
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