Part No:
BUV20
Category:
Transistors
Description:
NPN 200°C TJ 3mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tube Chassis Mount
Package:
-
Production Status:
In Stock Status:
Specification
Mount
Chassis Mount, Through Hole
Transistor Element Material
Moisture Sensitivity Level (MSL)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Products Detail
BUV20 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 25A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 5A, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 8MHz.During maximum operation, collector current can be as low as 50A volts.
BUV20 Features
the DC current gain for this device is 20 @ 25A 2V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 1.2V @ 5A, 50A
the emitter base voltage is kept at 7V
the current rating of this device is 50A
a transition frequency of 8MHz
BUV20 Applications
There are a lot of STMicroelectronics
BUV20 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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