PD55035S-E Description

The component is an enhancement-mode lateral field-effect RF power transistor with a shared source N-channel. It is intended for industrial, commercial, and high gain applications. It runs in common source mode at 12 V at frequencies up to 1 GHz. The device is housed in PowerSO10RF, the first true SMD plastic RF power package, and has the high gain, linearity, and reliability of ST's most recent LDMOS technology.

PD55035S-E Features

• outstanding thermal stability

• Config of common sources

• POUT = 35 W with a gain of 16.9 dB at 500 MHz and 12.5 V.

• Novel plastic package for RF

PD55035S-E Applications

Switching applications