Name: STB11N52K3
Brand: STMicroelectronics
SKU: STB11N52K3

STB11N52K3 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 170 mJ.A device's maximal input capacitance is 1400pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 525V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 281 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STB11N52K3 Features

the avalanche energy rating (Eas) is 170 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 281 ns
based on its rated peak drain current 40A.
a threshold voltage of 3.75V