Name: STB11NK50ZT4
Brand: STMicroelectronics
SKU: STB11NK50ZT4

STB11NK50ZT4 [STMicroelectronics]

Part No:

STB11NK50ZT4

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 520m ? @ 4.5A, 10V ±30V 1390pF @ 25V 68nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Factory Lead Time

12 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

Termination

SMD/SMT

ECCN Code

EAR99

Resistance

520mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Additional Feature

AVALANCHE RATED

Voltage - Rated DC

500V

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Current Rating

10A

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB11N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

125W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

125W

Turn On Delay Time

14.5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1390pF @ 25V

Current - Continuous Drain (Id) @ 25°C

10A Tc

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Rise Time

18ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

15 ns

Turn-Off Delay Time

41 ns

Continuous Drain Current (ID)

4.5A

Threshold Voltage

3.75V

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

40A

Dual Supply Voltage

500V

Nominal Vgs

3.75 V

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB11NK50ZT4 Description

STB11NK50ZT4 is an N-channel Zener-protected SuperMESH? power MOSFET provided by STMicroelectronics based on the well-established PowerMESH? technology and strip-based PowerMESH? layout. It is able to minimize on-state resistance and gate charge while ensuring a very good dv/dt capability for the most demanding applications.

STB11NK50ZT4 Features

Extremely high dv/dt capability
100% avalanche tested
Low gate charge
Low on-state resistance
Available in the D2PAK package

STB11NK50ZT4 Applications

Switching applications

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

ST(B,P)11NK50Z(FP)

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.