Name: STB13NM60N
Brand: STMicroelectronics
SKU: STB13NM60N

STB13NM60N [STMicroelectronics]

Part No:

STB13NM60N

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 360m ? @ 5.5A, 10V ±25V 790pF @ 50V 30nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

NRND (Last Updated: 7 months ago)

Factory Lead Time

26 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

360mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB13N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

90W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

90W

Turn On Delay Time

3 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 50V

Current - Continuous Drain (Id) @ 25°C

11A Tc

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Rise Time

8ns

Drain to Source Voltage (Vdss)

600V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

10 ns

Turn-Off Delay Time

30 ns

Continuous Drain Current (ID)

11A

Threshold Voltage

Gate to Source Voltage (Vgs)

25V

Pulsed Drain Current-Max (IDM)

44A

DS Breakdown Voltage-Min

600V

Avalanche Energy Rating (Eas)

200 mJ

Height

4.6mm

Length

10.75mm

Width

10.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB13NM60N Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.

STB13NM60N Features

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

STB13NM60N Applications

Switching applications

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

ST(B,D)13NM60N Datasheet STB13NM60N-STMicroelectronics-datasheet-10835784.pdf STB13NM60N-STMicroelectronics-datasheet-62335121.pdf STB13NM60N-STMicroelectronics-datasheet-10407072.pdf STB13NM60N-STMicroelectronics-datasheet-14220827.pdf STB13NM60N-STMicroelectronics-datasheet-21631356.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.