STB25NM50N-1 [STMicroelectronics]

STB25NM50N-1 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2565pF @ 25V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 88A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STB25NM50N-1 Features

a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 88A.

STB25NM50N-1 Applications

There are a lot of STMicroelectronics
STB25NM50N-1 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching