Name: STB37N60DM2AG
Brand: STMicroelectronics
SKU: STB37N60DM2AG

STB37N60DM2AG [STMicroelectronics]

Part No:

STB37N60DM2AG

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

Description: Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

RoHS Status

RoHS Compliant

Part Life Cycle Code

Active

Package Description

TO-263, D2PAK-3/2

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

16 Weeks

Avalanche Energy Rating (Eas)

650 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

600 V

Drain Current-Max (ID)

28 A

Drain-source On Resistance-Max

0.11 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263AB

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

112 A

Reference Standard

AEC-Q101

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Products Detail

STB37N60DM2AG Description

The MDmeshTM DM2 rapid recovery diode series includes the STB37N60DM2AG MOSFET. It features a very low recovery charge (Qrr) and time (trr), as well as a very low RDS(on), making it perfect for bridge topologies and ZVS phase-shift converters.