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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STB37N60DM2AG STMicroelectronics

    STB37N60DM2AG [STMicroelectronics]

    STB37N60DM2AG
    STB37N60DM2AG

    Part No:

    STB37N60DM2AG

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    Description: Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package

    RoHS Status:

    Product FAQ

    1. Is STB37N60DM2AG available for RFQ?

    Yes. STB37N60DM2AG by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STB37N60DM2AG?

    Pricing for STB37N60DM2AG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STB37N60DM2AG?

    STB37N60DM2AG is a STMicroelectronics Transistors with Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED and Drain-source On Resistance-Max: 0.11 Ω. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STB37N60DM2AG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STB37N60DM2AG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STB37N60DM2AG?

    Yes. If STB37N60DM2AG is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STB37N60DM2AG

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    RoHS Status
    RoHS Compliant
    Part Life Cycle Code
    Active
    Package Description
    TO-263, D2PAK-3/2
    Reach Compliance Code
    not_compliant
    ECCN Code
    EAR99
    Factory Lead Time
    16 Weeks
    Avalanche Energy Rating (Eas)
    650 mJ
    Case Connection
    DRAIN
    Configuration
    SINGLE WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min
    600 V
    Drain Current-Max (ID)
    28 A
    Drain-source On Resistance-Max
    0.11 Ω
    FET Technology
    METAL-OXIDE SEMICONDUCTOR
    JEDEC-95 Code
    TO-263AB
    JESD-30 Code
    R-PSSO-G2
    Number of Elements
    1
    Number of Terminals
    2
    Operating Mode
    ENHANCEMENT MODE
    Operating Temperature-Max
    150 °C
    Operating Temperature-Min
    -55 °C
    Package Body Material
    PLASTIC/EPOXY
    Package Shape
    RECTANGULAR
    Package Style
    SMALL OUTLINE
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Polarity/Channel Type
    N-CHANNEL
    Pulsed Drain Current-Max (IDM)
    112 A
    Reference Standard
    AEC-Q101
    Surface Mount
    YES
    Terminal Form
    GULL WING
    Terminal Position
    SINGLE
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Transistor Application
    SWITCHING
    Transistor Element Material
    SILICON

    Products Detail

    STB37N60DM2AG Description


    The MDmeshTM DM2 rapid recovery diode series includes the STB37N60DM2AG MOSFET. It features a very low recovery charge (Qrr) and time (trr), as well as a very low RDS(on), making it perfect for bridge topologies and ZVS phase-shift converters.



    STB37N60DM2AG Features


    • Designed for use in automobiles and

    • AEC-Q101 accredited

    • Body diode with a quick recovery time

    • Gate charge and input capacitance are quite low.

    • On-resistance is low.

    • Avalanche-proofed to the nth degree

    • Ruggedness is extremely high in terms of dv/dt.

    • Zener-protected



    STB37N60DM2AG Applications


    Switching applications



    Documents

    Datasheets:

    STB37N60DM2AG Datasheet
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
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