Name: STB45N40DM2AG
Brand: STMicroelectronics
SKU: STB45N40DM2AG

STB45N40DM2AG [STMicroelectronics]

Part No:

STB45N40DM2AG

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 72m ? @ 19A, 10V ±25V 2600pF @ 100V 56nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

17 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STB45N

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max

250W Tc

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 100V

Current - Continuous Drain (Id) @ 25°C

38A Tc

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Drain to Source Voltage (Vdss)

400V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Continuous Drain Current (ID)

38A

Drain-source On Resistance-Max

0.072Ohm

Pulsed Drain Current-Max (IDM)

110A

DS Breakdown Voltage-Min

400V

Avalanche Energy Rating (Eas)

1100 mJ

RoHS Status

RoHS Compliant

Products Detail

STB45N40DM2AG Description

This high-voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode series. It offers a very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.