Part No:
STB5NK50ZT4
Category:
Transistors
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.5Ohm @ 2.2A, 10V ±30V 535pF @ 25V 28nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)
Max Operating Temperature
Min Operating Temperature
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Products Detail
STB5NK50ZT4 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 535pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 32 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.5Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3.75V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STB5NK50ZT4 Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 1.5Ohm
a threshold voltage of 3.75V
a 500V drain to source voltage (Vdss)
STB5NK50ZT4 Applications
There are a lot of STMicroelectronics
STB5NK50ZT4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
Key Features
No key features available
Application scenarios
No application scenarios available
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