Part No:
STBV42-AP
Category:
Transistors
Description:
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
Package:
-
Datasheet:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Emitter Base Voltage (VEBO)
Products Detail
STBV42-AP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 400mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 250mA, 750mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1A volts.
STBV42-AP Features
the DC current gain for this device is 10 @ 400mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.5V @ 250mA, 750mA
the emitter base voltage is kept at 9V
STBV42-AP Applications
There are a lot of STMicroelectronics
STBV42-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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