STD100N10F7 [STMicroelectronics]

Name: STD100N10F7
Brand: STMicroelectronics
SKU: STD100N10F7

Part No:

STD100N10F7

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 8m ? @ 40A, 10V ±20V 4369pF @ 50V 61nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Cut Tape (CT)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

8MOhm

HTS Code

8541.29.00.95

Technology

MOSFET (Metal Oxide)

Terminal Form

THROUGH-HOLE

Base Part Number

STD10

Number of Elements

1

Power Dissipation-Max

120W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

120W

Case Connection

ISOLATED

Turn On Delay Time

27 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

4369pF @ 50V

Current - Continuous Drain (Id) @ 25°C

80A Tc

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Turn-Off Delay Time

46 ns

Continuous Drain Current (ID)

80A

Threshold Voltage

4.5V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

100V

Avalanche Energy Rating (Eas)

400 mJ

Height

2.4mm

Length

6.6mm

Width

6.2mm

REACH SVHC

No SVHC

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD100N10F7 Description

STD100N10F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a Gate to Source Voltage (Vgs) of 20V. These STripFETTM F7-enabled N-channel Power MOSFETs have an improved trench gate structure that results in very low on-state resistance while also lowering internal capacitance and gate charge for quicker and more effective switching.