STD11NM65N [STMicroelectronics]

STD11NM65N Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 147 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 800pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.As far as peak drain current is concerned, its maximum pulsed current is 44A.The DS breakdown voltage should be maintained above 650V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

STD11NM65N Features

the avalanche energy rating (Eas) is 147 mJ
a continuous drain current (ID) of 11A
based on its rated peak drain current 44A.
a 650V drain to source voltage (Vdss)

STD11NM65N Applications

There are a lot of STMicroelectronics
STD11NM65N applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies