STD14NM50NAG [STMicroelectronics]

STD14NM50NAG Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 172 mJ.The maximum input capacitance of this device is 816pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 12A.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

STD14NM50NAG Features

the avalanche energy rating (Eas) is 172 mJ
based on its rated peak drain current 48A.
a 500V drain to source voltage (Vdss)

STD14NM50NAG Applications

There are a lot of STMicroelectronics
STD14NM50NAG applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,