STD3NM60-1 [STMicroelectronics]

STD3NM60-1 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 324pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STD3NM60-1 Features

the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage

STD3NM60-1 Applications

There are a lot of STMicroelectronics
STD3NM60-1 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools