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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STD5NK60ZT4 STMicroelectronics

    STD5NK60ZT4 [STMicroelectronics]

    STD5NK60ZT4
    STD5NK60ZT4

    Part No:

    STD5NK60ZT4

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.6 ? @ 2.5A, 10V ±30V 690pF @ 25V 34nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

    RoHS Status:

    Product FAQ

    1. Is STD5NK60ZT4 available for RFQ?

    Yes. STD5NK60ZT4 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STD5NK60ZT4?

    Pricing for STD5NK60ZT4 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STD5NK60ZT4?

    STD5NK60ZT4 is a STMicroelectronics Transistors with Packaging: Tape & Reel (TR) and Current - Continuous Drain (Id) @ 25°C: 5A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STD5NK60ZT4?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STD5NK60ZT4 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STD5NK60ZT4?

    Yes. If STD5NK60ZT4 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STD5NK60ZT4

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
    Mount
    Surface Mount
    Mounting Type
    Surface Mount
    Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Manufacturer Package Identifier
    DPAK-0068772-C2
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Tape & Reel (TR)
    JESD-609 Code
    e3
    Part Status
    Not For New Designs
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    Termination
    SMD/SMT
    ECCN Code
    EAR99
    Resistance
    1.6Ohm
    Terminal Finish
    Matte Tin (Sn) - annealed
    Voltage - Rated DC
    650V
    Technology
    MOSFET (Metal Oxide)
    Terminal Form
    GULL WING
    Peak Reflow Temperature (Cel)
    260
    Reach Compliance Code
    not_compliant
    Current Rating
    5A
    Time@Peak Reflow Temperature-Max (s)
    30
    Base Part Number
    STD5N
    Pin Count
    3
    JESD-30 Code
    R-PSSO-G2
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Number of Channels
    1
    Power Dissipation-Max
    90W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    90W
    Turn On Delay Time
    16 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    690pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    5A Tc
    Gate Charge (Qg) (Max) @ Vgs
    34nC @ 10V
    Rise Time
    25ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Fall Time (Typ)
    25 ns
    Turn-Off Delay Time
    36 ns
    Continuous Drain Current (ID)
    5A
    Threshold Voltage
    3V
    JEDEC-95 Code
    TO-252AA
    Gate to Source Voltage (Vgs)
    30V
    Drain Current-Max (Abs) (ID)
    5A
    Drain to Source Breakdown Voltage
    600V
    Pulsed Drain Current-Max (IDM)
    20A
    Dual Supply Voltage
    600V
    Avalanche Energy Rating (Eas)
    220 mJ
    Max Junction Temperature (Tj)
    150°C
    Nominal Vgs
    3.75 V
    Height
    2.48mm
    Length
    6.6mm
    Width
    6.2mm
    REACH SVHC
    No SVHC
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STD5NK60ZT4 Overview


    Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 220 mJ.A device's maximal input capacitance is 690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 36 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

    STD5NK60ZT4 Features


    the avalanche energy rating (Eas) is 220 mJ
    a continuous drain current (ID) of 5A
    a drain-to-source breakdown voltage of 600V voltage
    the turn-off delay time is 36 ns
    based on its rated peak drain current 20A.
    a threshold voltage of 3V


    STD5NK60ZT4 Applications


    There are a lot of STMicroelectronics
    STD5NK60ZT4 applications of single MOSFETs transistors.


    • Consumer Appliances
    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples

    Documents

    Datasheets:

    ST(D,P)5NK60Z(FP)
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